Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry
Journal
International Journal of Nanotechnology
Journal Volume
12
Journal Issue
1-2
Pages
97-110
Date Issued
2015
Author(s)
Xie, D.
Qiu, Z.R.
Talwar, D.N.
Liu, Y.
Song, J.-H.
Huang, J.-L.
Mei, T.
Liu, C.W.
Feng, Z.C.
Abstract
Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co–sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps.
Type
journal article