High Accuracy Positioning Stage for an E-Beam Lithography System
Date Issued
2009
Date
2009
Author(s)
Chang, Yu-Cian
Abstract
In the next generation lithography, electron beam lithography is regarded as the most potential lithography technology. In order to correct the proximity effect , pattern distortion, the displacement error of about 3~5 µm from the original stage and to increase the stage precision, a precision 6 degree-of-freedom motion stage for the scanning electron microscope (SEM) system is designed. Nano stage is integrated into the original stage of JEOL 7000F JSM SEM. Piezoelectric actuators are used in the nano stage because of its advantages including small size, high precision resolution and stiffness. However, the hysteresis causes large displacement errors. A PID controller is used as the closed loop control to reduce hysteresis effect, and the pattern is generated by moving the nano stage while keeping the E-beam fixed. A minimum line width of 38 nm, proximity correction, and large displacement pattern stitching are achieved.
Subjects
E-beam lithography
nano stage
multi-d-o-f
piezoelectric
PID control
hysteresis
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-98-R96522808-1.pdf
Size
23.53 KB
Format
Adobe PDF
Checksum
(MD5):f6443f3cb67813929ff7c4dac593539f