Analysis of EUV effects on Ge MOSFETs and Resistive Random Access Memory modeling by tunneling mechanisms fitting in HRS
Date Issued
2012
Date
2012
Author(s)
Lai, Jing-Cheng
Abstract
First part of this thesis is investigating the effect of Extreme Ultra Violet (EUV) on high performance Ge MOSFETs for the considering those device will be fabricated by Extreme Ultra Violet Lithography (EUVL). The main degradations of MOSFETs are the creation of fixed charges in oxide layer and interface state near Ge/GeO2, which results the degradation of threshold voltage and sub-threshold swing. The mechanism of degraded junction characteristic is due to damage on germanium substrate, which leads to the increase of diode leakage. The creation of interface state of Ge/GeO2 under EUV irradiation is near conduction band. Therefore, the degradation of n-MOSFETs is much severer than p-MOSFETs.
The second part is the model and physical mechanism of Resistive random access memory (RRAM). RRAM is one of the many types nonvolatile memory, which is the most promising candidate to replace traditional flash memory. External voltage is added on RRAM to switch the device between low resistance state (LRS) and high resistance state (HRS), and recorded to Logic 0 or 1. Our devices are prepared by Industrial Technology Research Institute (ITRI). There are different experiment tests on RRAM, such as different current compliance, maximum negative voltage Vstop. Using tunneling theory fit RRAM IV characteristic in HRS with different operation conditions for paving the way for a compact SPICE model for circuit simulation.
Subjects
EUV reliability
Ge MOSFETs
RRAM
Type
thesis
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