Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires
Journal
Nano Letters
Journal Volume
3
Journal Issue
4
Pages
537-541
Date Issued
2003
Author(s)
Lin, H.-M.
Chen, Y.-L.
Yang, J.
Liu, Y.-C.
Yin, K.-M.
Kai, J.-J.
Chen, F.-R.
Chen, L.-C.
Chen, C.-C.
Abstract
A convenient thermal CVD route to core−shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.
Type
journal article