Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures
Journal
Physica Status Solidi (B) Basic Research
Journal Volume
228
Journal Issue
1
Pages
121-124
Date Issued
2001
Author(s)
Feng, S.-W.
Cheng, Y.-C.
Liao, C.-C.
Chung, Y.-Y.
Lin, Y.-S.
Ma, K.-J.
Chyi, J.-I.
URI
Abstract
Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.
Type
journal article