Amorphous-Silicon Thin-Film Transistor with Liquid Phase Deposition of Silicon Dioxide Gate Insulator
Journal
IEEE Electron Device Letters
Journal Volume
20
Journal Issue
3
Pages
138-139
Date Issued
1999
Author(s)
Yeh, J.-L.
Abstract
The liquid phase deposition of silicon dioxide (LPD-SiO/sub 2/) at 50/spl deg/C has been successfully applied as the gate insulator for inverted, staggered amorphous silicon thin-film transistors (TFTs). The maximum field-effect mobility of the TFTs, estimated from the saturation region, was 0.53 cm/sup 2//V-s, comparable to that obtained for conventional, silicon nitride (SiN/sub x/) gate transistors. The threshold voltage and subthreshold swing were 6.2 V and 0.76 V/decade, respectively. Interface and bulk characteristics are as good as those obtained for silicon nitride (SiN/sub x/) films deposited by plasma enhanced chemical vapor deposition.
SDGs
Type
journal article