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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall
Details
Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall
Journal
Nanotechnology
Journal Volume
25
Journal Issue
49
Date Issued
2014
Author(s)
CHIH-CHUNG YANG
Cai, D.
Lin, N.
Xu, H.
Liao, C.-H.
CHIH-CHUNG YANG
DOI
10.1088/0957-4484/25/49/495705
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84912052181&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/385603
SDGs
[SDGs]SDG7
Type
journal article