Mechanical properties and Cd-free buffer layer for CIGS solar cell
Journal
Innovation, Communication and Engineering - Proceedings of the 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
Pages
111-113
Date Issued
2014
Author(s)
Abstract
Nano-structured CuIn 1-x Ga x Se 2 heterojunction solar cellsfabricatedon glass are studied. About 100 nm-thick ZnS buffer layer was deposited on CIGS film by chemical bath deposition, and it generate an open circuit voltage of 0.540V, a current density of 31 mA/cm 2 , a fill factor of 61% and an efficiency of 9.5% with Cd-free green processing. In addition, the CIGS films had a maximum roughest surface morphology at 200¢XC. the hardness and Young's modulus decreased with increasing annealing temperature at 400¢XC. ? 2014 Taylor & Francis Group.
Subjects
CIGS
Solar cells
Young's modulus
Type
conference paper