Temperature Sensor By Utilizing An MOS Tunneling Diode
Date Issued
2004
Date
2004
Author(s)
Jeng, Ing-Shan
DOI
en-US
Abstract
Abstract
When the MOS tunneling diode with ultra-thin oxide was positively biased , the gate current that saturated rapidly within 0.5 V was affected by its substrate temperature significantly . The gate current is controlled by the minority carrier . The current of MOS structure depends on the temperature , so we can use it to measure the temperature .
The MOS tunneling diode exhibits the following basic characteristics :
1 . The current of the MOS tunneling diode is very small .
2 . The current of the MOS tunneling diode is not linearly dependent on the temperature .
Because we want to use the MOS tunneling diode for the measurement of the temperature , we must overcome two difficulties . The saturated MOS current is mainly caused by the minority carrier-limited current , so it is very small . Because we want to use the MOS current to measure the temperature , we must amplify the MOS current . We use two npn transistors for the current amplifier . Because we want to use the MOS current for the temperature measurement , its temperature dependence should be linear . We use a diode for the implementation of the voltage with a linear temperature dependence . The voltage Vd of the diode varies linearly with temperature , but it is very small . We use an op to amplify the voltage Vd of the diode . Because the I(C)-V(BE) relationship of the npn transistor in the active region is like the relationship I-V of the diode , we can use the npn transistor in place of the diode . There are two kinds of circuits that show the linear dependence of output voltage on temperature proposed in this work .
Subjects
MOS穿透二極體
MOS
tunneling diode
Type
thesis
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