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College of Science / 理學院
Applied Physics / 應用物理研究所
Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy
Details
Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy
Journal
Applied Physics Letters
Journal Volume
101
Journal Issue
19
Date Issued
2012
Author(s)
Ebert, P.
Landrock S.
YA-PING CHIU
Breuer, U.
Dunin-Borkowski, R.E.
DOI
10.1063/1.4765360
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84869009613&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/372922
Type
journal article