Short-range structure of Si in heavily Si doped InAs studied by X-ray Absorption Near Edge Structure
Date Issued
2015
Date
2015
Author(s)
Liu, Mu-Chi
Abstract
We successfully measured the Si K-edge X-ray absorption near edge structure (XANES) spectra within the heavily Si doped InAs thin film grown by molecular beam epitaxy (MBE). By comparing the experiment results with the simulation spectrum of different local structures calculated by FEFF9 program, we realize the local structure of Si atoms within InAs. Si atom tend to replace the In atom (SiIn) in heavily Si doped InAs, becoming an n-type dopant. The distances between SiIn and 4 nearest As atoms will shrink to 2.230 A, and the SiIn will be ionized by an effective charge of +0.5. The p-type dopant or pair diffusion local structures of Si atom are unlikely to appear in the heavily Si doped InAs.
Subjects
Si
InAs
short-range structure
XANES
Type
thesis
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