Photoluminescence Spectra Study of Germanium Manganese Diluted Magnetic Semiconductor
Date Issued
2009
Date
2009
Author(s)
Hong, Chien-Chou
Abstract
In this paper we will first deal with the development of the semiconductor industry, the current situation and the rise of diluted magnetic semiconductor applications, as well as known.n the second chapter we will explore the possibility of using molecular beam epitaxy system (molecular beam epitaxy, MBE) to grow Ge-Mn alloy (GeMn) group IV diluted magnetic semiconductor. Physical background and the recent research results from all scientists around the world will also be presented. The photoluminescence spectrums for diluted magnetic semiconductors vary with low-volume changes in magnetic field. We’ll discuss some effects that result in spectral shift and their physical background: Zeeman effect (the splitting of a spectral line into several components in the presence of a static magnetic field), diamagnetic shift, as well as the electron spin-orbit sp-d exchange interaction.n chapter 3 we illustrate the experimental samples of our material, recalling some characteristics of the same growth conditions. Then we’ll introduce the structure of our photoluminescence spectrum experiment.inally, in chapter 4 we will discuss the results of our photoluminescence spectrum experiment and then use Matlab to simulate the energy shift.
Subjects
GeMn
DMS
Photoluminescence
Type
thesis
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