Fabrication and Characterization of InGaN/GaN Micro Rod Structure Light-Emitting Diode Using Self-assembled Nanosphere Lithography
Date Issued
2010
Date
2010
Author(s)
Lin, Chen-Yen
Abstract
The fabrication and characterization of InGaN/GaN micro rod light-emitting diode (LED) using self-assembled nanosphere lithography are investigated in this thesis. First, we discuss the theory and process of self-assemble nanosphere lithography. We successfully use spin coating to spread out single layer close-packed 1um polystyrene spheres. The self-assembled sphere are the mask for etching InGaN/GaN micro rod LED. Moreover,we report the use of recessive size reduction in self-assembled sphere mask with reactive ion etching to from micro-lens array onto surface of Si and GaN. It can apply to laser despeckling and surface roughness.
Second, we successfully combine the chemical mechanical polishing (CMP) planarization and photoelectrochemical(PEC) pas¬sivation technique to fabricate micro rod structure light-emitting diode. Leakage current of this device with oxide passivation layer is reduced from 2.358uA to 53nA at reverse bias 5V compared to the device without oxide layer. Moreover, the radiation pattern shows that the percentage of light intensity in oblique angle of micro rod LED is higher than that of typical planar LED. The far-field radiation angle at half maximum intensity is occurs at 82°, FWHM angle is 164°.
Subjects
nanosphere lithography
GaN
micro rod
light-emitting diode
Type
thesis
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