A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier
Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
7
Journal Issue
5
Pages
133-135
Date Issued
1997
Author(s)
Chen, Y.C.
Lai, R.
Lin, E.
Block, T.
Yen, H.C.
Streit, D.
Jones, W.
Liu, P.H.
Dia, R.M.
Huang, P.-P.
Abstract
We have developed W-band high-power monolithic microwave integrated circuit (MMIC) amplifiers using passivated 0.15-μm gate length InGaAs/InAlAs/InP HEMT's. A 640-μm single-stage MMIC amplifier demonstrated an output power of 130 mW with 13% power-added efficiency and 4-dB associated gain at 94 GHz. This result represents the best output power to date measured from a single fixtured InP-based HEMT MMIC at this frequency.
SDGs
Other Subjects
Current voltage characteristics; Gain measurement; High electron mobility transistors; Integrated circuit manufacture; Optimization; Power amplifiers; Semiconducting gallium arsenide; Semiconducting indium phosphide; High power monolithic microwave integrated circuit (MMIC) amplifiers; Monolithic microwave integrated circuits
Type
journal article