Study on the formation of zinc peroxide on zinc oxide with hydrogen peroxide treatment using x-ray photoelectron spectroscopy (XPS)
Journal
Electronic Materials Letters
Journal Volume
10
Journal Issue
1
Pages
51-55
Date Issued
2014
Author(s)
Abstract
In a previous study, we found that zinc oxide (ZnO) samples under different hydrogen peroxide (H2O2) treatment durations show the ability to dramatically rectify a diode's behavior. In this study, the H2O2 mechanism is examined by grazing incidence x-ray diffraction (GIXRD) and x-ray photoelectron spectroscopy (XPS) analyses. In GIXRD, a diffraction peak (111) from the zinc peroxide (ZnO2) was observed for the films grown at low temperatures. The XPS depth profiles of the core O1s clearly indicated oxidation, and an interfacial ZnO2 layer covered the ZnO surface via the H2O2 treatment. The Schottky barrier heights of the treated and untreated samples were illustrated using energy band diagrams. © 2014 The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.
SDGs
Type
journal article