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College of Electrical Engineering and Computer Science / 電機資訊學院
Communication Engineering / 電信工程學研究所
An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-μm CMOS technology
Details
An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-μm CMOS technology
Journal
European Microwave Week 2010: Connecting the World, EuMIC 2010
Pages
436-439
Date Issued
2010
Author(s)
Chi, P.-S.
Tsai, Z.-M.
Kuo, J.-L.
Lin, K.-Y.
Wang, H.
KUN-YOU LIN
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-78649579418&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/357829
Type
conference paper