Depth profiling the electronic structures at HfO<inf>2</inf>/Si interface grown by molecular beam epitaxy

Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy

Journal

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Journal Volume

23

Journal Issue

3

Pages

1291-1293

Date Issued

2005

Author(s)

Lay, T.S.

Chang, S.C.

Din, G.J.

Yeh, C.C.

Hung, W.H.

Lee, W.G.

Kwo, J.

DOI

URI

URL

Type

conference paper