Infrared spectroscopic studies of II-VI and III-V compound semiconductors
Date Issued
2008
Date
2008
Author(s)
Hou, Fu-Chung
Abstract
A series of optical characterization techniques, including Raman scattering, Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL), photoluminescence excitation (PLE), X-ray diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS) were employed to assess II-VI and III-V compound semiconductors. In this thesis, we study the optical properties, especially on Raman scattering and FTIR, of InSb bulk, Metalorganic magnetron sputtering (MOMS)-grown InSb films on GaAs substrates, MOMS-grown GaSb films on GaAs substrates, grown InGaAs films on InP substrates, HgMnTe bulk, CdSeTe bulk, CdZnTe bulk, CdZnMnTe bulk, CdMnSeTe bulk, and molecular beam epitaxy (MBE)-grown CdTe films on InSb substrates, and so on. e got their fitted parameters through fitting with dielectric function of these semiconductors their far-IR spectra. The dielectric constant, the mobility, the carrier concentration of these samples and TO phonon peaks, damping constant, and oscillator strength of TO phonon in these samples were obtained by simulating their far-IR spectra. Measured at two temperatures, 80K and 300K, the far-IR spectra present the TO phonon peaks have a blue shift with the decreasing temperature. e have two series samples grown by MOMS; grown InSb films on GaAs substrates and grown GaSb on GaAs substrates. Their far-IR spectra have been shown and studied in chapter 4. Especially the MOMS-grown GaSb on GaAs substrates reveals the existence of a GaSb-GaAs intermixed layer near the interface.he far-IR spectra of bulk Hg1-xMnxTe, CdSexTe1-x, and Cd1-xZnxTe with different x have been fitted. We observed their TO phonon peaks shift with increasing x. Series MBE-grown CdTe films on InSb substrates with different growth conditions have been studied. Their far-IR spectra at 300K are shown in Chapter 5. But advanced studies are needed.
Subjects
FTIR
reflectance
II-VI
III-V
Type
thesis
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