Experimental evidence for a metal-insulator transition and geometric effect in a half-filled Landau level
Journal
Physica E: Low-Dimensional Systems and Nanostructures
Journal Volume
2
Journal Issue
1-4
Pages
78-81
Date Issued
1998
Author(s)
Abstract
We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al0.33Ga0.67 s heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor v = 1/2, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased, in agreement with theory. We also report experimental evidence of geometric effect for composite fermions induced by an effective magnetic field. © 1998 Elsevier Science B.V. All rights reserved.
Type
journal article