High performance Ga2O3(Gd2O 3)/Ge MOS devices without interfacial layers

Journal

39th European Solid-State Device Research Conference

Pages

407-410

Date Issued

2009

Author(s)

Chu, L.K.

Chu, R.L.

Huang, M.L.

Tung, L.T.

Lin, T.D.

Chang, C.C.

Kwo, J.

DOI

10.1109/ESSDERC.2009.5331480

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443395

http://scholars.lib.ntu.edu.tw/handle/123456789/349406

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-72849148499&doi=10.1109%2fESSDERC.2009.5331480&partnerID=40&md5=bdf85ba8911fd5e81e665cf9e4824d80

Type

conference paper