High performance Ga2O3(Gd2O 3)/Ge MOS devices without interfacial layers
Journal
39th European Solid-State Device Research Conference
Pages
407-410
Date Issued
2009
Author(s)
Abstract
Excellent electrical performances have been demonstrated for the MOSCAPs and MOSFETs using Ga 2 O 3 (Gd 2 O 3 ) gate dielectrics deposited at room temperature on Ge(100) without employing any interfacial layers. In this work, we report a very low interfacial density of state (D it ) of ~2times10 11 cm -2 eV -1 , a low leakage current density (J g ) of ~10 -9 A/cm 2 , well-behaved capacitance-voltage (C-V) characteristics including an excellent quasi-static C-V curve along with a high efficiency of 80% for the Fermi-level movement near the mid-gap. In addition, a high saturation drain current and a high transconductance of 496 muA/mum and 178 muS/mum, respectively, for the 1 mum-gate-length device have been obtained as well.
Type
conference paper