The Research of Rapid Development Technology in Electron Beam Lithography
Date Issued
2015
Date
2015
Author(s)
Rao, Wei-Cheng
Abstract
In this study, we want to reduce the proximity effect in electron beam lithography (EBL) by using rapid development. From our experiments, we found that in the forward scattering, there are two different electrons. One is low energy, the other is high energy. There is no such concept before, and no one has ever separated them. The high energy electron we called forward scattered primary beam. And the low energy electron is the secondary electron which is bombarded by the primary beam when it inject in the photoresist. We inference the developing rate will follow the electron energy profile due to the developing mechanism. So we have established an experiment of single spot to measure the radius under different developing time in electron beam lithography. By linking the beam energy and developing rate, we are able to find out the developing rate function. And then we can define the region of forward scattered primary beam. By using rapid developing, we can confine the developing area in forward scattered primary beam region. And the proximity effect will be greatly reduced. Finally, we estimated that we can reduce the proximity effect over 60% by using the rapid developing method. And we exposure line arrays, the linewidth decreases over 50% to 15.6nm.
Subjects
electron beam lithography
developing speed
electron intensity distribution
Type
thesis
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