A New FET-Bipolar Combinational Power Semiconductor Switch
Journal
IEEE Transactions on Aerospace and Electronic System
Journal Volume
AES-20
Journal Issue
2
Pages
104-111
Date Issued
1984-03
Author(s)
Abstract
A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device. © 1984 IEEE
SDGs
Other Subjects
TRANSISTORS, FIELD EFFECT - Applications; BIPOLAR JUNCTION TRANSISTORS; ELECTRIC SWITCHES, SEMICONDUCTOR
Type
journal article