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College of Science / 理學院
Applied Physics / 應用物理研究所
Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy
Details
Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy
Journal
Journal of Materials Science: Materials in Electronics
Journal Volume
3
Journal Issue
4
Pages
206-210
Date Issued
1992
Author(s)
Wang, YH
Houng, MP
Chen, FH
Sze, PW
MINGHWEI HONG
Mannaerts, JP
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/297846
Type
journal article