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College of Science / 理學院
Applied Physics / 應用物理研究所
High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations
Details
High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations
Journal
J. Vacuum Science and Technology B
Journal Volume
28
Journal Issue
3
Date Issued
2010
Author(s)
Chu, RL
Lin, TD
Chu, LK
Huang, ML
Chang, CC
MINGHWEI HONG
Lin, CA
Kwo, J
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/357465
Type
journal article
