Fabrication of Ge on Insulator and Device Application
Date Issued
2006
Date
2006
Author(s)
Lee, Chen-Yi
DOI
en-US
Abstract
In this thesis, a thin layer of germanium is bonded successfully to another silicon wafer capped with about 80 nm SiO2 by direct hydrophilic bonding and hydrogen-induced layer transfer. Lower bonding temperature as 150oC will result in a smoother surface with roughness of ~6 nm by AFM measurement after H2 blistering. Lower bonding temperatures allow the implanted hydrogen ions to passivate the defects caused by implantation damages more effectively.
The ability of germanium to absorb in the near infrared makes it a promising candidate in high-speed photodetector application. Hence, GOI MOS photodetectors are studied in the thesis. The leakage current at inversion bias is reduced by metal gate technique. The gate oxide is deposited by liquid phase deposition which carriers can tunnel through it via the assistance of multiple traps. 0.8-μm-thick Ge detectors have higher responsivity at 850 nm exposure while 1.3-μm-thick Ge detectors have higher responsivity at 1310 nm exposure. With external mechanical biaxial strain, the photo current, the responsivity, and the efficiency of the device are all enhanced.
Subjects
絕緣層上鍺
晶圓鍵結
氫離子佈植
germanium-on-insulator
wafer bonding
hydrogen implantation
Type
thesis
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