Giant room temperature electric-field-assisted magnetoresistance in La 0.7Sr0.3MnO3/n-Si nanotip heterojunctions
Journal
Nanotechnology
Journal Volume
22
Journal Issue
12
Pages
1-5
Date Issued
2011
Author(s)
Chong, C.-W.
Hsu, D.
Chen, W.-C.
Li, C.-C.
Huang, Y.-F.
Han, H.-C.
Chen, K.-H.
Abstract
An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La(0.7)Sr(0.3)MnO(3) (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 µA. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.
SDGs
Publisher
Institute of Physics Publishing
Type
journal article