Ordering InGaP epilayer grown on Ge substrate
Journal
Thin Solid Films
Journal Volume
570
Journal Issue
PB
Pages
390-393
Date Issued
2014-01
Author(s)
Abstract
We report on the structural properties of ordering InGaP directly deposited on (001) Ge substrate by organometallic vapor phase epitaxy. The Ge substrate is 6° miscut towards (110). Results from transmission electron diffraction indicate the existence of CuPt-B ordering phase in the sample. The ordering direction is assigned to be [11¯1], which is perpendicular to the miscut direction of the Ge substrate. Because only one ordering phase is observed, no anti-phase domain exists in the sample. The order parameter determined from photoluminescence at room temperature is 0.492. Raman scattering was also used to analyze the ordering effect. A mode at 354 cm- 1 relevant to the ordering phase confirms that the CuPt-B ordering is along [11¯1].
Type
journal article