An analysis of the anomalous dip in scattering parameter S22 of InGaP-GaAs heterojunction bipolar transistors (HBTs)
Journal
IEEE Transactions on Electron Devices
Journal Volume
49
Journal Issue
10
Pages
1831-1833
Date Issued
2002
Author(s)
Abstract
The kink phenomenon in scattering parameter S/sub 22/ of InGaP-GaAs heterojunction bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedance of InGaP-GaAs HBTs can be represented by a simple series resistance-capacitance (R-C) circuit at low frequencies and a simple parallel R-C circuit at high frequencies very accurately because of the high output resistance of HBTs. The behavior of S/sub 22/ of HBTs is in contrast with that of field effect transistors (FETs), where the smaller drain-source output resistance R/sub ds/ obscures the ambivalent characteristics.
SDGs
Type
journal article