Research of Fully Integrated High Efficiency Class-E Power Amplifier and 2.4GHz/5GHz Dual Band High Efficiency Power Amplifier
Date Issued
2015
Date
2015
Author(s)
Huang, Po-Shun
Abstract
With the rapid growth of semiconductor process, demand of integrated circuit and development of wireless communication systems, implementing RF integrated circuit with CMOS process become a new development trend for the industry market. In the transceiver design, most of power consumption is come from power amplifier, thus power amplifier is a key component for RF circuit design. Because of widespread of mobile devices, high efficiency becomes a focus point for power amplifier design. As mentioned above, the design and analysis of high efficiency CMOS power amplifier is the topic of this thesis. In chapter 2, the operation principles of class-E power amplifier is introduced and also discuss non-ideal effect on CMOS process, including parasitic resistance and capacitance of transistor. In the end of this chapter, a 5.3 GHz WLAN application single ended class-E power amplifier is presented, from the measurement result the circuit can achieve over 40% PAE and has output power of 21dBm. In chapter 3, because of parasitic capacitance of CMOS transistor, we choose smaller device size to reduce parasitic capacitance and use transformer combine technique to obtain high output power also maintain high efficiency of class-E operation. The measurement result we achieve over 25dBm output power and PAE of 32%. In chapter 4, due to the rapid expansion of wireless communication, demand of dual band power amplifier growth rapidly. For class-E design, shunt capacitance is a critical design parameter. Thus we use varactor to adjust shunt capacitance and make the circuit has best power performance at two design frequencies. From measurement result, we can achieve over 30% PAE for dual band applications.
Subjects
Class-E power amplifier
high efficiency
transformer combine
dual band
Type
thesis
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