Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells
Resource
IEEE Journal of Quantum Electronics, 46(6), 884-889
Journal
IEEE Journal of Quantum Electronics
Journal Volume
46
Journal Issue
6
Pages
884-889
Date Issued
2010
Author(s)
Chang, Cheng-Yu
URI
Abstract
Recently, InGaN/GaN quantum wells with different nanostructures such as nanoholes and nanorods have been proposed to enhance the light emitting efficiency. This paper calculates the influence of nanostructures to the strain and band profile of the quantum well. The effects of strain relaxation and surface states are analyzed, which could possibly influence the diode emission properties. Our calculation results show that the strain relaxation and the surface state pinning play important roles in enhancing the light emission, reducing the quantum confined Stark effect, and causing the blue shift of the spectrum. Our calculation results provide useful information in analyzing emission properties of nanohole arrays and similar structures. © 2010 IEEE.
Subjects
GaN; InGaN; Nanohole; Quantum well; Strain relaxation; Surface state; Valenceforce field model
SDGs
Other Subjects
InGaN; Nanoholes; Quantum well; Surface state; Valence-force field model; Electric current measurement; Gallium alloys; Gallium nitride; Light emission; Nanorods; Quantum theory; Spectroscopy; Strain control; Strain relaxation; Semiconductor quantum wells
Type
journal article