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  4. A 4.8-GHz Dividerless Subharmonically Injection-Locked All-Digital PLL With a FOM of-252.5 dB
 
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A 4.8-GHz Dividerless Subharmonically Injection-Locked All-Digital PLL With a FOM of-252.5 dB

Journal
IEEE Transactions on Circuits and Systems II: Express Briefs
Journal Volume
60
Journal Issue
9
Pages
547-551
Date Issued
2013-09
Author(s)
I-Ting Lee
Kai-Hui Zeng
SHEN-IUAN LIU  
DOI
10.1109/tcsii.2013.2268640
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/381460
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84884586635&doi=10.1109%2fTCSII.2013.2268640&partnerID=40&md5=062b9fbe826c4c034bfb585e3718e095
Abstract
A subharmonically injection-locked all-digital phase-locked loop (ADPLL) is presented to achieve both low power and low phase noise simultaneously. This ADPLL uses a bang-bang phase detector to maintain the phase locking without a time-to-digital converter, and the dividers can be disabled to reduce the power. In addition, a subharmonically injection-locked technique is used to achieve a low phase noise. This ADPLL is fabricated in a 40-nm complementary metal-oxide-semiconductor technology. Its power consumption is 3.661 mW for a supply voltage of 1.1 V. The measured phase noise is equal to $-$122.33 dBc/Hz at an offset frequency of 1 MHz. The integrated root-mean-square jitter is 123.4 fs for the offset frequency from 1 kHz to 100 MHz. The calculated figure of merit is equal to $-$ 252.5 dB. © 2013 IEEE.
Subjects
All-digital phase-locked loop (ADPLL); injection locked; subharmonically
SDGs

[SDGs]SDG7

Other Subjects
CMOS integrated circuits; Frequency converters; Metals; MOS devices; Oxide semiconductors; Phase locked loops; Phase noise; Semiconductor device manufacture; All digital phase locked loop; Bang-bang phase detectors; Complementary metal-oxide-semiconductor technologies; Injection locked; Injection-locked technique; Root mean square jitter; subharmonically; Time to digital converters; Phase comparators
Type
journal article

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