Preparation and characterization of Cu(In, Ga)Se 2 powders via the modified solvothermal route
Journal
Journal of Materials Science: Materials in Electronics
Journal Volume
26
Journal Issue
6
Pages
3479-3485
Date Issued
2015
Author(s)
Lin Y.-H.
Abstract
Cu(In, Ga)Se 2 powders were successfully prepared in the solvothermal reaction at 240?¢XC via using triethanolamine in the solution. The Raman spectrum and the UV¡VVis-NIR spectroscopy further confirmed that the obtained powders were single-phased Cu(In, Ga)Se 2 compound. In comparison with the conventionally solvothermal process, the required reaction duration was significantly reduced to 5?h as the concentration of triethanolamine was 2?M. Triethanolamine induces the two-dimensional growth of Cu(In, Ga)Se 2 crystals via the selective passivation, leading to the formation of plate-like particles at high concentrations of triethanolamine. The photoluminescence spectra implied that the number of surface defects was reduced via capping the nonradiative recombination centers with triethanolamine. Ethylenediamine played a similar role to triethanolamine, facilitating the synthesis of Cu(In, Ga)Se 2 . In the solvothermal process, increasing the reaction duration reduced the amount of CuInSe 2 and CuGaSe 2 , resulting in the formation of pure Cu(In, Ga)Se 2 powders. ? 2015, Springer Science+Business Media New York.
Type
journal article