A Redox-Based Resistive Switching Memory Device Consisting of Organic–Inorganic Hybrid Perovskite/Polymer Composite Thin Film

Journal

Advanced Electronic Materials

Journal Volume

3

Journal Issue

12

Date Issued

2017

Author(s)

Ercan, E.

Chen, J.-Y.

Tsai, P.-C.

Lam, J.-Y.

Huang, S.C.-W.

DOI

10.1002/aelm.201700344

URI

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85037746175&doi=10.1002%2faelm.201700344&partnerID=40&md5=d7461b5f569f783d2b7d6ccc66f670fc

https://scholars.lib.ntu.edu.tw/handle/123456789/431906

Publisher

Blackwell Publishing Ltd

Type

journal article