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College of Science / 理學院
Applied Physics / 應用物理研究所
Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling
Details
Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling
Journal
IEEE Transactions on Electron Devices
Journal Volume
44
Journal Issue
2
Pages
214-225
Date Issued
1997
Author(s)
Passlack, M
MINGHWEI HONG
Mannaerts, JP
Opila, RL
Chu, SNG
Moriya, N
Ren, F
Kwo, JR
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/331368
Type
journal article
