Fabrication and properties of indium tin oxide/ZnO Schottky photodiode with hydrogen peroxide treatment
Journal
Japanese Journal of Applied Physics
Journal Volume
50
Journal Issue
8 PART 1
Date Issued
2011
Author(s)
Abstract
A transparent, efficient ZnO ultraviolet Schottky detector with indium tin oxide (ITO) as a metallic contact layer is fabricated on ITO-coated glass substrates by cw CO 2 laser evaporation. The device behavior changes from near ohmic to Schottky in the current–voltage characteristics after hydrogen peroxide treatment on the ZnO surface with a fitted barrier height of 1.16 eV, an ideality factor of 2.31, and a leakage current of 3.1×10 -7 A at -3 V bias. Photoluminescence (PL) data show the effect of hydrogen peroxide, and indicate that the surface defects are removed, and better diode characteristics are shown.
SDGs
Type
journal article