Study of Dielectric Property Enhancement with Different Directions and Sizes Magnetic Moment in Magnetic Complex Thin Film
Date Issued
2014
Date
2014
Author(s)
Huang, Sung-Jie
Abstract
In this thesis, we used magnetron sputtering deposition technique to deposit the magnetic complex thin film that integrates Fe51Pt49 into BaTiO3 thin film capacitor. The capping layer of Fe51Pt49 have three different directions and the size of the magnetic moment by annealing and one more Ag capping layer. The magnetoelectric effect arising from the FePt/BaTiO3 interface enhances the relative dielectric constant of BaTiO3 with FePt which has perpendicular magnetic anisotropy and did not add the Ag. When the magnetic complex thin film integrates FePt into cubic BaTiO3 thin film ceramic capacitor, the relative dielectric constant was enhanced to 814 in 1kHz measuring frequency. In magnetic metal/insulator/non-magnetic metal structure, FePt/MgO/ BaTiO3/Pt/Ti/SiO2, we find 379%, 278% and 102% room temperature magnetocapacitance effect in 1kHz, 2kHz and 4kHz measuring frequencies respectively. But we can not use FePt with Ag capping to be the electrode because of it’s poor conductivity. Furthermore, the leakage current of the magnetic complex thin film which has level of anisotropy capacitor is lower than the magnetic complex thin film which has perpendicular anisotropy in I-V curve.
Subjects
磁電效應
磁電耦合
磁電容效應
鐵鉑合金
鈦酸鋇
垂直序化
高介電係數介電層
Type
thesis
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ntu-103-R01522638-1.pdf
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