Crystallization mechanisms of (In15Sb85)(100-x)Bi-x phase change recording thin film
Resource
Materials & Design, 31(4), 1688-1690
Journal
Materials & Design
Journal Volume
31
Journal Issue
4
Pages
1688-1690
Date Issued
2010
Date
2010
Author(s)
Ou, Sin-Liang
Kuo, Po-Cheng
Sheu, Shu-Chi
Lin, Ger-Pin
Tsai, Tsung-Lin
Chen, Sheng-Chi
Chiang, Don-Yau
Tang, Wei-Tai
Abstract
The (In15Sb85)100-xBix films (x = 0-18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In15Sb85)100-xBix film (x = 0-18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In15Sb85)100-xBix films was amorphous and it would transform to Sb, InSb, Bi, and BiIn2 coexisting phases after annealing at 250 °C for 30 min. Crown Copyright © 2009.
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Type
journal article
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