Piezoelectric effects in the optical properties of strained InGaN quantum wells
Resource
Applied Physics Letters 74 (6): 795-797
Journal
Applied Physics Letters
Journal Volume
74
Journal Issue
6
Pages
795-797
Date Issued
1999
Date
1999
Author(s)
Abstract
We investigated the carrier-injection effects in the emission spectrum of strained GaN/InGaN/ AIGaN quantum well (QW) blue emitters using a pulsed current excitation technique. Spectral blueshift as large as 80 meV in the emission peak energy was observed as the injection current increases from 1 mA to 1 A. Based on a self-consistent calculation that couples the Poisson equation with a wurtzite-type Rashba-Sheka-Pikus Hamiltonian, four important interactions are evaluated in order to determine the optical properties of InGaN QW. It is shown that the spectral redshifting caused by a piezoelectricity induced quantum confined Stark effect and carrier-induced band gap renormalization is counteracted by a blueshift due to the band filling and charge screening effects. The increase of InGaN QW emission peak energy and intensity with injected carriers suggests a dominant contribution from the latter in a band-to-band recombination process. © 1999 American Institute of Physics.
Other Subjects
Electric currents; Electroluminescence; Emission spectroscopy; Energy gap; Light emitting diodes; Mathematical models; Piezoelectricity; Semiconducting gallium compounds; Semiconductor quantum wells; Carrier injection effects; Charge screening effects; Optical gain; Pulsed current excitation technique; Stark effect; Light emission
Type
journal article
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