Spatial characterization of doped SiC wafers by Raman spectroscopy
Resource
J. Appl. Phys.,84,6268-6273.
Journal
J. Appl. Phys
Journal Issue
84
Pages
6268-6273
Date Issued
1998-01
Date
1998-01
Author(s)
Burton, J.C.
Sun, L.
Pophristic, M.
Long, F.H.
Feng &, Z.C.
Ferguson, I.
Type
journal article