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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect
Details
Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect
Journal
International Electron Devices Materials Symposium
Date Issued
2009-11
Author(s)
H. J. Hung
J. B. Kuo
D. Chen
C. S. Yeh
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/351958
Type
conference paper