Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots
Resource
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Journal
IEEE Conference on Nanotechnology
Journal Volume
2002-January
Pages
341-342
Date Issued
2002
Author(s)
Abstract
The mechanisms responsible for the shift of the photoluminescence spectrum to longer wavelength by depositing an InGaAs cap layer on InAs/GaAs quantum dots are studied in detail. It is demonstrated that the phase separation growth of InAs and GaAs rather than the stress in the InAs quantum dots is the main reason for the wavelength shifts. AFM images of a single InAs quantum dot are presented and the reason for the differences between AFM and SEM images is discussed.
Type
conference paper
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