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College of Science / 理學院
Applied Physics / 應用物理研究所
DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION
Details
DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION
Journal
Electrochemical Society ( ECS ) Proceedings
Pages
84-90
Date Issued
1997
Author(s)
Ren, F
MINGHWEI HONG
Hobson, WS
Kuo, JM
Lothian, JR
Mannaerts, JP
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/331371
Type
journal article
