Improvement of Light Output in GaN-based LEDs by Surface Texturing with SiO2 Nano-particles
Date Issued
2007
Date
2007
Author(s)
Hsieh, Min-Yann
DOI
zh-TW
Abstract
In this paper, we present a novel method to fabricate textured GaN-based LEDs using a SiO2 nano-mask and ICP dry etching. The SiO2 nano-particles are placed on top of the p-type layer simply by spin-coating or immersion. The optical output power of a surface textured LED is 1.4 times higher than that of a conventional LED (a LED without surface textured). In addition, the current-voltage (I-V) curve of the textured LED is nearly the same as that of a conventional LED, which implies that the fabrication process greatly improves light extraction efficiency without damaging the electrical properties of the LED material.
One-dimensional nanostructures, such as nanotubes, nanowires, and nanorods, of GaN-based nitride semiconductors are known to have great prospects in fundamental physics and novel technological applications. However, fabrication and characterization of well-ordered nanostructures with high density are very important for the practical device applications. In this paper, we present InGaN/GaN MQW nanorod LEDs. From photoluminescence measurements, we observed a blue shift of the peak wavelength and a broad band yellow luminescence in the nanorod LED samples.
Subjects
氮化鎵
表面奈米結構
發光二極體
GaN
Surface textured
LED
Type
thesis
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