Pulsed laser deposition of epitaxial GaN x As 1-x on GaAs
Journal
Applied Physics Letters
Journal Volume
67
Pages
3951-3953
Date Issued
1995
Author(s)
Abstract
Epitaxial layers of GaNxAs1−x were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia (NH3) atmosphere. High-resolution x-ray diffraction indicates the existence of a threshold NH3 pressure, above which the incorporated N content x increases linearly with increasing NH3 pressure. The band-gap dependence of GaNxAs1−x on x for x⩽2.9% is examined by optical absorption and photoconductivity measurements at room temperature. We found that the band-gap energy reduces with higher N composition, and our results agree approximately with the prediction based on the dielectric model.
SDGs
Type
journal article