Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates
Journal
Superlattices and Microstructures
Journal Volume
156
Date Issued
2021
Author(s)
Wang B
Abstract
A series of 3C–SiC films were grown on 4H–SiC substrates with different growth conditions using high-temperature chemical vapor deposition (HT-CVD). The influences of growth temperature (Tg) on the morphology, optical and material properties of films were assessed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy (RSS). Significant effects of Tg on the film crystalline quality were observed from analyzing XRD and RSS results. XPS characterized the surface states of Si, C, O elements, and variations with Tg. The 3C–SiC Raman TO mode was found to shift to lower frequency with the increase of Tg in 1530–1580 °C. Temperature dependent Raman studies indicated the anharmonic coupling and variation of phonon lifetimes. The optimized Tg is obtained. ? 2021
Subjects
3C/4H–SiC
Epitaxial growth temperature
High temperature Raman
X-ray diffraction
X-ray photoelectron spectroscopy
Chemical vapor deposition
Epitaxial growth
Growth temperature
Photoelectrons
Photons
Silicon carbide
X ray diffraction
3c/4h–SiC
4H-SiC substrate
High temperature raman
Optical-
Property
Raman scattering spectroscopy
Thin epitaxial films
X- ray diffractions
X-ray photoelectrons
X ray photoelectron spectroscopy
Type
journal article