Multilayered gated lateral quantum dot devices
Journal
Applied Physics Letters
Journal Volume
76
Journal Issue
9
Pages
1134-1136
Date Issued
2000
Author(s)
Abstract
We describe a detailed device fabrication technique for the formation of a lateral quantum dot using a multilayered gated design. In our versatile system, a quantum dot is electrostatically defined by a split gate and two overlaying finger gates which introduce entrance and exit barriers to the dot. Periodic and continuous conductance oscillations arising from Coulomb charging effects are clearly observed in the transport properties at low temperatures.
SDGs
Type
journal article