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College of Engineering / 工學院
Chemical Engineering / 化學工程學系
Abnormal redeposition of silicate from Si 3 N 4 etching onto SiO 2 surfaces in flash memory manufacturing
Details
Abnormal redeposition of silicate from Si 3 N 4 etching onto SiO 2 surfaces in flash memory manufacturing
Journal
Journal of Materials Science
Journal Volume
55
Journal Issue
3
Pages
1126-1135
Date Issued
2020
Author(s)
Teng, K.-W.
Tu, S.-H.
Hu, S.-W.
Huang, Y.-X.
Sheng, Y.-J.
Tsao, H.-K.
YU-JANE SHENG
DOI
10.1007/s10853-019-04119-x
URI
https://www.scopus.com/inward/record.url?eid=2-s2.0-85074200789&partnerID=40&md5=84be623963afbe38b8d2f7c176c0547a
https://scholars.lib.ntu.edu.tw/handle/123456789/546562
SDGs
[SDGs]SDG9
Type
journal article