Research on K-Band Power Amplifier Using Modified Multi-Gated Transistor Linearization Technique
Date Issued
2015
Date
2015
Author(s)
Lin, Hung-Yu
Abstract
This thesis presents a K-band linearized power amplifier using modified multi-gated transistor technique. The linearized PA using modified multi-gated transistor (MGTR) technique is operated in K-band. Conventional MGTR technique is usually applied to the small-signal amplifier to improve the linearity, and mechanism of linearization is to reduce the third order transconductance (gm3). However, for power amplifier design, a larger transistor size is preferred to have a higher output power, which results in a low input impedance and voltage gain degradation. In order to solve this problem, a common-drain amplifier is added and cascaded with the auxiliary path in a conventional MGTR amplifier to increase the input impedance and improve the voltage gain. To verify the proposed concept, a K-band PA using the proposed modified MGTR technique is developed in 180-nm CMOS process. According to the measurement results, the OP1dB is 14.9 dBm, and the corresponding PAE is 11.7%. The maximum output power for the IMD3 which is less than -30 dBc is 11.9 dBm. The quiescent dc power consumption is 135 mW. Compared with the reported literatures, the proposed PA demonstrates less difference between OP1dB and maximum Pout under below -30 dBc. It means operation output power close to the OP1dB.
Subjects
Power amplifier
MGTR
K-band
Linearization technique
Type
thesis
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