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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments
Details
Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments
Journal
IEEE Electron Device Letters
Journal Volume
11
Journal Issue
2
Pages
82-84
Date Issued
1990
Author(s)
JENN-GWO HWU
DOI
10.1109/55.46935
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0025386444&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/288951
Type
journal article
