Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs
Journal
Solid-State Electronics
Journal Volume
42
Journal Issue
11
Pages
1933-1937
Date Issued
1998
Author(s)
Abstract
The gate recessing of a GaInP/InGaAs/GaInP quantum-well HEMT (QHEMT) using pure BCl3 plasma is found improved by the addition of an appropriate amount of Ar to the gas flow. The influence of BCl3/Ar gas flow ratio on GaAs to GaInP etch selectivity, surface roughness and surface damage was determined. These results indicate that the conditions for minimum surface roughness, as determined by atomic force microscopy, corresponded with the conditions for minimum plasma damage, as determine by Raman spectroscopy. The best BCl3/Ar gas flow ratio for minimum surface damage and roughness was found to be 6:4 at a pressure of 60 mTorr with a 100 W RF power at this study. Two BCl3:Ar flow rate ratios, 6:4 and 10:0 (pure BCl3) were used to etch the gate recess in GaInP/InGaAs/GaInP QHEMT. From C-V measurements, it is found that the plasma-induced damage of the sample S6:4 dry-etch with 6:4 BCl3/Ar is less than that of the sample S10:0 dry-etched with pure BCl3. The d.c. characteristics of S6:4 device was found to be superior to those of the wet-etched sample Swet and S10:0. In addition, the threshold voltage uniformity of sample S6:4 was found to be better than that of sample Swet and sample S10:0. © 1998 Published by Elsevier Science Ltd. All rights reserved.
Other Subjects
Atomic force microscopy; Capacitance measurement; Crystal defects; Dry etching; Gates (transistor); Raman spectroscopy; Reactive ion etching; Semiconducting indium gallium arsenide; Semiconductor plasmas; Semiconductor quantum wells; Surface roughness; Voltage measurement; Capacitance-voltage (C-V) characteristics; Minimum plasma damage; High electron mobility transistors
Type
journal article